AN APPROXIMATE MODEL FOR THE GRADED-BASE TRANSISTORGRUNG BL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 165-171; BIBL. 39 REF.Article

AN ANALYTICAL MODEL FOR THE LOW-EMITTER-IMPURITY-CONCENTRATION TRANSISTORGRUNG BL.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 821-832; BIBL. 11 REF.Article

AN ANALYTICAL MODEL FOR THE EDGE-ILLUMINATED SILICON SOLAR CELL UNDER CONCENTRATED SUNLIGHTGRUNG BL.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 9; PP. 755-760; BIBL. 6 REF.Article

AN ANALYTICAL MODEL FOR THE EPITAXIAL BIPOLAR TRANSISTOR.GRUNG BL; WARNER RM JR.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 9; PP. 753-771; BIBL. 35 REF.Article

A BIPOLAR LOCK-LAYER TRANSISTOR.WARNER RM JR; GRUNG BL.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 4; PP. 323-325; BIBL. 3 REF.Article

CHANNEL-COLLECTOR TRANSISTORSZIPPERIAN TE; WARNER RM JR; GRUNG BL et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 341-343; BIBL. 13 REF.Article

ELECTRON-VELOCITY SATURATION AT A BJT COLLECTOR JUNCTION UNDER LOW-LEVEL CONDITIONSWARNER RM JR; DONG HYUK JU; GRUNG BL et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 230-236; BIBL. 26 REF.Article

CONTINUOUS COATING OF SILICON-ON-CERAMICHEAPS JD; SCHULDT SB; GRUNG BL et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 39-48; BIBL. 15 REF.Conference Paper